German Researchers Unveil Flexible Elastomer Transistors to Replace Rigid Silicon in High-Voltage Electronics

Scientists at Saarland University create flexible elastomer-based transistors to replace rigid silicon in high-voltage and energy-efficient electronics.

By: AXL Media

Published: Apr 10, 2026, 7:55 AM EDT

Source: Information for this report was sourced from EurekAlert

The Evolution of the Silicone-Based Electronic Tap

The fundamental building block of modern computing, the transistor, is undergoing a material transformation at the Center for Mechatronics and Automation Technology in Saarbrücken. While traditional semiconductors rely on rigid layers of silicon or germanium to regulate electrical flow, Professor Paul Motzki and Professor John Heppe have successfully replaced these components with dielectric elastomers. According to Motzki, these smart films act as both actuators and sensors, mimicking the regulatory function of a water tap but within a flexible, lightweight framework. This shift from crystalline structures to elastic polymers allows for a new generation of electronics that can bend and vibrate while maintaining precise control over electrical signals.

Microscopic Cracks as a Mechanism for Control

The functional breakthrough of these film-based switches lies in a specialized "sputtering" technique used to apply conductive metal layers. John Heppe explains that the team deposits a metal coating, roughly a thousand times thinner than a human hair, onto a pre-stretched elastomer film. When further tension is applied, the metal layer develops microscopic cracks that interrupt the flow of current, effectively turning the switch off. Conversely, when the tension is released, the cracks close and the film becomes highly conductive once more. This mechanical approach to electrical resistance allows the system to toggle between the ohm range and the high megaohm range with extreme speed and precision.

Strategic Shift Toward Energy-Efficient High-Voltage Systems

By moving away from carbon black powders toward these sputtered metal electrodes, the researchers have significantly lowered electrical resistance to between 50 and 100 ohms. This efficiency is critical for managing high-voltage circuits in the kilovolt range, which typically require bulky and expensive conventional hardware. According to the research team, these film-based transistors only consume energy during the transition of states, remaining power-neutral while holding a fixed position. This strategic advantage positions the technology as a primary candidate for miniaturizing complex motion sequences in industrial pumps, valves, and high-frequency switching applications.