Cornell University researchers utilize advanced electron microscopy to map atomic defects inside 3D transistors

Cornell University uses electron ptychography to see atomic flaws inside 3D transistors, helping chipmakers fix "mouse bite" defects in next-gen processors.

By: AXL Media

Published: Mar 6, 2026, 6:43 AM EST

Source: The information in this article was sourced from Cornell University

Visualizing the Atomic Frontier of Semiconductors

Researchers at Cornell University have achieved a milestone in semiconductor science by capturing high-resolution 3D images of the internal atomic structure of computer chips. Published in Nature Communications on February 23, 2026, the study marks the first time that atomic-scale defects have been directly observed within functional transistor architectures. As modern chips shrink to dimensions where channels are only 15 to 18 atoms wide, these tiny imperfections become significant barriers to performance, affecting everything from smartphones to artificial intelligence data centers.

The Evolution from Flat to 3D Architectures

The project, led by Professor David Muller, highlights the shift from mid-20th-century flat transistor layouts to modern vertical stacking. These 3D structures, designed to save surface area on silicon wafers, resemble high-rise apartment buildings but at a scale smaller than a virus. Because these "apartments" are so intricate, identifying why a chip might be underperforming has historically relied on projective images and guesswork. The new technique allows engineers to see exactly where every atom is placed, transforming the way faults are identified during the high-stakes development stage of semiconductor manufacturing.

Electron Ptychography and the EMPAD System

The breakthrough was made possible by a computational imaging technique known as electron ptychography, paired with an electron microscope pixel array detector (EMPAD). This system, co-developed by Muller’s group, records the scattering patterns of electrons as they pass through a sample. By analyzing these patterns, researchers can reconstruct images with such precision that they have earned a Guinness World Record for the highest resolution ever captured. This "jet-age" microscopy allows scientists to move past the limitations of older tools to observe materials like hafnium oxide—the industry standard for preventing current leaks in sub-microscopic devices.